Abstract
Optical response of the indium arsenide (InAs)/gallium arsenide (GaAs) quantum dots (QDs) with a bimodal distribution is investigated through varying an initial GaAs capping layer between 35 and 18 monolayers. Photoluminescence (PL) measurements confirm that a thinner initial capping layer can reduce the QD dimensions and also modify the population ratio between the large QDs and the small QDs. Therefore, PL quenching related to QD dimension and carrier transfer between the bimodal QD populations has been affected. Manipulation of the initial GaAs capping layer provides a feasible approach to tailor the formation and optical performance of InAs QDs for optoelectronic device applications.
Published Version
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