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Abstract
This work proposes a new pixel structure based on amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) and a parallel addressing scheme for high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The proposed circuit compensates for the nonuniformity of luminance that is caused by shifts in the threshold voltage ( ${{V}}_{{\rm{TH}}}$ ) and mobility of driving TFTs. Measurement results verify that the parallel addressing scheme successfully extends the compensation time and accurately detects the ${{V}}_{{\rm{TH}}}$ of the driving TFT. Moreover, the proposed circuit reduces the variations of OLED luminance from more than 83% to less than 13% when the ${{V}}_{{\rm{TH}}}$ and mobility of driving TFT shifts by 1 V and 30%, respectively, and the ${{V}}_{{\rm{TH}}}$ of OLED varies from 0 to 0.9 V.
Published Version
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