Abstract
The poly buffered LOCOS (PBL) technology makes use of a thin silicon film between a thermal silicon oxide layer and a silicon nitride layer. Pits or holes in the silicon film, formed in subsequent process steps, damage the underlying silicon and defeat the device isolation. In this paper we study the influence of deposition temperature, and post‐treatment on pit formation in LPCVD silicon films formed from silane and disilane precursors. We show that homogeneously amorphous silicon films (deposition temperature ≪550°C) do not develop device level pits during subsequent processing, in PBL technology.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
