Abstract
We have fabricated a new p–i–n type broad-buffer diode, in which the broad-buffer zone was formed directly inside of the silicon bulk wafer using a hydrogen-related shallow donor (HRSD), by proton irradiation and additional thermal annealing, for the first time. The switching characteristics of the diode were evaluated, and the diode's fast and soft reverse recovery performance was confirmed. Activation of the HRSD via irradiation at room temperature was also observed by capacitance-voltage measurement without additional thermal annealing. Moreover, annealing at a temperature of 350 °C prevents electron mobility from degrading in the irradiated zone, despite its disordered structure.
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