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Abstract
Indium tin oxide(ITO)films are prepared on flexible polyimide(PI)substrates by RF magnetron sputtering.The influences of oxygen ratio,sputtering power,working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope(SEM),X-ray diffraction(XRD),four-probe tester and spectrophotometry.The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon,sputtering power of 200 W,working pressure of 1.5Pa and substrate temperature of185℃~225℃.Under the optimal condition,the resistivity of 3.64×10-4Ω·cm and transmittance of 97%are achieved.
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