Year-end Sale % OFF 
Abstract
Bottom-gate structure TFT device technology on flexible PI substrate was discussed in the paper.Undercut shape of the double layer caused by the different dry etching rate was solved by the improvement of technics.The TFT device was based on IGZO as active layer,and Si3N4/SiO2 double layer structure was employed as gate insulator,undercut shape introduced thin film deposition break risk was effectively solved using two times of exposure compensation.The experimental results show that,the taper angle of double-layer structure after dry etching which was observed using SEM was suitable for following film deposition of TFT devices.The mobility of TFT on flexible PI substrate reaches 14.8cm2/(V·s),threshold voltage of Vthis about 0.5V,subthreshold swing(SS)is about 0.5V/decade,and ratio of Ion/Ioffis upper 106.TFT device performance by this method is good,and meets the driving requirements of LCD,OLED or electronic paper.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
