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Abstract
We report observation of the piezoresistive effect of β-Ga2O3 and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β-Ga2O3 materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β-Ga2O3 samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of −5.8 ± 0.1 is measured from a Ti/Au-β-Ga2O3-Ti/Au structure under tensile uniaxial stress in the [010] direction at room temperature.
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