Abstract
In this work the fabrication of a piezoelectrically actuated microswitch for high current applications is proposed. In particular, the microswitch was properly designed to drive currents of the order of 1A. The device was obtained assembling two silicon substrates: one containing the signal lines and the other enclosing a silicon nitride microcantilever. This latter operates as a switch by closing the circuit with a multilayered metal electrode on its tip. Four layers of lead zirconate titanate (PZT), deposited by sol–gel method, constitute the actuation element of the microcantilever. The bottom and top electrodes of the PZT were respectively made of thin Ti/Pt and Ti/Au layers, deposited by electron beam evaporation. The signal lines and the contact-electrode on the microcantilever tip were made of Ti/Ni/Au/Cu (with a total thickness of about 1μm). The two substrates were finally bonded together by Au/Sn eutectic bonding.
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