Abstract

Abstract Fabrication processes of piezoelectric ZnO films utilizing sputtering deposition technique and properties of the sputtered films are described mainly in view of their application to surface-acoustic-wave (SAW) devices. Both polycrystalline films with c-axis orientation and single-crystal films on sapphire are treated in this paper. As for the polycrystalline films, it is emphasized that an improved sputtering system with a hemispherical electrode configuration provides excellent uniformity of film thickness and c-axis orientation. The single-crystal films have been successfully grown by conventional rf-sputtering and rf magnetron sputtering. The rf magnetron sputtering is found to be superior over the conventional method with respect to SAW properties of the films. Fundamental SAW properties have been measured for the films and the results are compared with theoretical predictions. Several SAW devices in a wide variety of operating frequency (30–2200 MHz) have been realized using the ZnO films. Some of them are now in practical use. It is noted that the polycrystalline films have the advantages that various substrate materials are allowed and good temperature-stability is obtained. On the other hand, the single-crystal films on sapphire are suitable for high-frequency SAW devices owing to their high phase velocity and low propagation loss.

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