Abstract
We report a large change in the photoluminescence (PL) properties induced by piezoelectric effects found in 10-nm-thick InGaN quantum wells. The time-resolved PL properties are measured with changing excitation intensity at 17 K. A blueshift in the PL peak of 200 meV and a decrease in the PL decay time from 3 μs to 17 ns are found with increasing excitation intensity. This large change is caused by a strong internal electric field up to 1 MV/cm and a spatial separation between an electron and a hole of as much as three times the Bohr radius.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
