Abstract

By employing the classic hydrodynamic model of semiconductor-plasmas, an analytical investigation is made to study the piezoelectric contributions to optical parametric amplification of acoustical phonons in magnetized doped III–V semiconductors. Assuming the origin of nonlinear interaction to lie in nonlinear-induced current density and electrostrictive polarization of the medium, expressions are obtained for threshold pump amplitude for the onset of parametric process and parametric gain coefficient in the presence and absence of piezoelectricity and/or externally applied magnetostatic field. Numerical analysis is made for n-InSb-CO2 laser system. The piezoelectric contributions to optical parametric amplification process are only in the presence of magnetostatic field. The parametric gain coefficient is independent of doping concentration for the cases when either/both piezoelectricity and magnetostatic field are absent. Around resonance (electron-cyclotron frequency~pump wave frequency), the parametric gain coefficient in the presence of piezoelectricity is 102 times higher than in the absence of piezoelectricity. The analysis establishes the technological potentiality of magnetized weakly piezoelectric doped III–V semiconductors as the hosts for fabrication of parametric amplifiers.

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