Abstract

We report a new method to analyze the piezobirefringence coefficient in an opaque region in which the stress-induced changes in both the real ($\ensuremath{\Delta}{\ensuremath{\epsilon}}_{1}$) and imaginary part ($\ensuremath{\Delta}{\ensuremath{\epsilon}}_{2}$) of the dielectric constant are properly taken into account. New coefficients, which determine the fractional contributions of $\ensuremath{\Delta}{\ensuremath{\epsilon}}_{1}$ and $\ensuremath{\Delta}{\ensuremath{\epsilon}}_{2}$ to the piezobirefringence coefficient, have been derived from an analytical point of view. The experimental data on Si and ZnSe reported recently have been analyzed by using the present result. Good agreement between the experiment and calculation has been found. The present method provides a guiding principle for analyzing the piezobirefringence coefficient in an opaque region.

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