Abstract

Bismuth ferrite based thin films were grown by RF magnetron sputtering under different experimental conditions. The effects of substrate temperature, Ar:O2 mass flow ratio and gas mixture pressure on the films’ microstructure, phase evolution, optic, ferroelectric and magnetic properties were systematically investigated. The structural analysis results revealed an amorphous phase for the films deposited at a substrate temperature below 500 °C, while for the thin films deposited at 700 °C, a ε-Fe2O3 secondary phase was detected. The diffraction lines of the samples deposited at 600 °C were associated with Bi2Fe4O9 and Bi25FeO40 phases. The increase in the mixture gas pressure up to 1 Pa showed an improved crystallinity of the deposited films, while, at higher working gas pressures, the films were found to be amorphous. The use of low O2 to Ar mass flow ratio during the deposition led to a phase transformation process. EDX and RBS measurements exposed a uniform distribution of the main elements, revealing some stoichiometry changes induced by the pressure variation. The optical band gap values were influenced by the substrate temperature and pressure of the Ar:O2 gas. The magnetic properties were correlated with the structural features, the highest magnetic response being observed for the sample deposited at 600 °C, 1 Pa and 3:1 Ar:O2 gas pressure. According to the PFM results, the film deposited at 700 °C, Ar:O2 ratio 3:1 and total gas pressure 1 Pa clearly outperformed the others due to their excellent ferroelectric properties and outstanding piezo-response. The sample deposited at 700 °C showed both visible light-driven degradation and piezodegradation activities. The piezocatalytic and photocatalytic activities were ascribed to the high piezoresponse and to a more efficient separation of electrons and holes induced by a built-in electric field that is caused by the larger remnant polarization of Bi2Fe4O9 and Bi2Fe4O9/ε-Fe2O3 hetero-junction.

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