Abstract
The orientation of CaCuO2 films was examined under various RF sputtering conditions. Two types of crystal growth, (001) and (110) orientation, were controlled by varying the partial pressure of O2 and Ar gas. (001) orientation was observed at lower gas pressure and (110) orientation was observed at higher gas pressure. This suggests that the orientation of CaCuO2 film is related to the total pressure of the sputtering gas.
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