Piecewise physical modeling of series resistance and inductance of on-chip interconnects

Abstract

A physically-based piecewise modeling of the frequency-dependent series resistance and inductance of IC interconnects is presented. The model relies on representing the influence of the frequency-dependent skin and current distribution effects on the characteristics of the interconnects, and detailed explanation of the model parameter extraction is also given. This modeling allows to accurately represent the high-frequency performance of on-chip interconnects by considering the correct and physically expected variation of the series resistance and inductance with frequency. Results in the frequency domain show excellent model-experiment correlations for interconnects fabricated on RF-CMOS technology. Moreover, time domain results were also performed to demonstrate the causality of the proposed model.