Abstract

A new analytic model is presented (based on the induced current density distribution inside silicon substrate) to calculate the frequency dependent distributed series inductance and associated series resistance per unit length of a microstrip interconnect on lossy silicon substrate. The validity of the proposed model has been checked by a comparison with a full-wave spectral domain approach and equivalent-circuit modeling procedure. It is found that the difference between the closed-form solution and the EM simulation results was less than 4% over a wide range of substrate resistivities and frequencies.

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