Abstract
Picosecond energy relaxation processes of excitons in the well layers of GaAs- and Al x Ga 1− x As-AlAs multi-quantum-well structures have been studied. The energy-loss rate of excitons is almost proportional to the exciton linewidth of the absorption spectra regardless of the material of the well layers and the well layer thickness. The energy relaxation processes of excitons are discussed on the basis of the localized exciton transfer model.
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