Abstract
Light-induced reflectance dynamics of a porous silicon multilayered structure via the picosecond pump-probe technique is investigated. Fast recovery dynamics is inspected for a range of excitation energy densities (2.4-24 mJ/cm2), incident angles (0°-25°), and polarizations. Modeling performed using the transfer matrix method revealed the photonic origin of the phenomena observed. The spectral shift of the reflectance spectrum, i.e., photonic bandgap, responsible for the positive signal originates from the change of photoinduced carrier concentration with linear and nonlinear character for different porosity layers. The influence of temperature on the refractive index in this thermally nonconductive material is taken into account.
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