Abstract
Picosecond mid-IR USPL induced surface damage on a Gallium Phosphate (GaP) and Calcium Fluoride (CaF₂) is reported. A semiconductor GaP and a dielectric material CaF₂, that are transparent over 3~10 ㎛, were exposed to one picosecond mid-IR light (4.7 ㎛) to investigate laser-induced surface morphological changes on the target. The initiation of damage along the polishing scratch line of GaP and the random location of damage digs on the CaF₂ suggests that the mid-IR picosecond laser-induced damage on targets started from intrinsic surface defects. Multiple pulse irradiations produced periodic corrugated surface structures (ripples) perpendicular to the polarization of light on both GaP and CaF₂. In terms of the orientation and the spacing between ripples, observed ripples have common features with previously reported ripples.
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