Abstract
GaAs, due to its high charge carrier mobility and its relatively large band gap, is a promising candidate for the detection of ultrafast gamma ray, X-ray and laser pulses, both for timing and for intensity measurements. Starting from high resistivity (> 107 ω cm) undoped GaAs, photodetectors of various shapes have been developed. Instabilities in bulk GaAs of high resistivity under electric field, previously described as low velocity domain propagation, and tailing in the pulse response are avoided by fast neutron irradiation. Time resolution (FWHM) in the 10 ps range and linearity of more than five decades have already been achieved.
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