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Abstract
The carrier spin relaxation of In0.8Ga0.2As/AlAs/AlAs0.56Sb0.44 coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir–Aronov–Pikus process between 10 and 100 K and by the D'yakonov–Perel' and Elliott–Yafet processes between 100 K and room temperature.
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