Abstract
New dynamic electro-thermal models of the power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made developing a new 1D representation of the ambipolar diffusion equation which is packaged as a module that can be reused for all bipolar devices, subject to appropriate boundary conditions. Then electric models were transformed into the electro-thermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and the rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.
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