Abstract
Physically based compact device models of the MOSFET, as well as PiN diode and insulated gate bipolar transistor (IGBT) are presented in this paper. For the correct description of static and dynamic behaviour of power bipolar devices (IGBT and PiN diode) a 1D module for the drift zone (low doped n-base region) is presented that incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, it is possible to transform, relatively easily, these electric models into the electrothermal models by adding an extra node (thermal node) to the electrical compact models. This thermal node will store information about junction temperature of the active device and it represents a connection between the device and rest of the circuit thermal network.
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