Abstract
In this study, a physics-based model for emitter controlled (EMCON) p–i–n diode is proposed. The model is based on the one-dimensional Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The ADE is solved for all injection levels based on the design concepts of EMCON diode. The deep field stop layer utilised in the EMCON diode is also considered in the solution. Moreover, the depletion behaviour in the N-base during reverse recovery is redescribed. To be self-contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode are used to validate the proposed model. The simulation results are compared with experiment waveforms and good agreement is obtained.
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