Abstract
In this study, we present an improved comprehensive model of power diodes. This model is based on the numerical solution of the ambipolar diffusion equation (ADE) by a modified finite difference method using MATLAB. The ADE is solved for all levels of injection instead of high-level injection only as usually done. Local physical effects such as conductivity modulation, emitter recombination, carrier–carrier scattering and lifetime control are taken into consideration. Temperature and self-heating effects are also included in the model. The proposed model has been validated against Silvaco mixed-mode simulations showing very good agreement with much less simulation times for our model. To be self contained, we also present a model parameter extraction methodology for power diodes given their experimental transient waveforms.
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