Abstract
This study presents a physics-based compact model of the integrated gate-commutated thyristor (IGCT) with multiple effects for the high-power application. The proposed model has both acceptable accuracy and computation time requirement, which is suitable for system level circuit simulation and IGCT's whole wafer modelling work. First, the development of IGCT model is discussed and the one-dimensional phenomenon of IGCT is analysed in this study. Second, a physics-based compact model of IGCT is proposed. The proposed model of IGCT includes multiple physical effects that are crucial to IGCTs working in high-power applications. These physical effects include the impact ionisation effect, moving the boundary of the depletion region during the punch-through and the local lifetime region. The Fourier series solution is applied to the ambipolar diffusion equation in the base region. Third, the proposed model is implemented in Simulink and compared with the model in Silvaco Atlas, a finite-element tool. Finally, the proposed compact model of IGCT is validated by experiments.
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