Abstract
Avalanche photodiodes (APDs) made in HgCdTe have been developed for a large number of applications over the last 15 years. The developments have been motivated by exceptional gain characteristics that enables the detection of a low number of photons with close to negligible loss of information over observation times ranging from sub nanoseconds up to milliseconds. In this communication, we review the present understanding of the physics that governs the gain, noise, and response time characteristics of HgCdTe APDs. Recent data resulting from impulse response measurements are also reported that demonstrate a fast 4 GHz bandwidth response at 80 K and show the capacity to obtain bandwidths in excess of 10 GHz in such detectors.
Published Version
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