Physics and Device Science in II-VI Semiconductor Visible Light Emitters

Abstract

This chapter presents the fundamental physics and the device-related scientific aspects of II-VI semiconductor visible light emitters. Excitons in these materials are relatively stable and play an important role in light emission. Doping and electrical contacts present special problems in these materials. Defect formation energies are relatively small and promote device degradation. The chapter also discusses a range of compounds from which present light-emitting structures are being fabricated, by focusing on the description and characterization of the electronic states that are central to the quantum well and heterojunction physics of ZnSe-based heterostructures. Doping and electron-hole transport of the wide band-gap II-VI semiconductors, both in thin films and in heterostructures are presented in the chapter along with an examination of the physics of light emission by II-VI heterostructures in the context of spontaneous and stimulated emission by Coulomb correlated quasi-2D (quasi- two dimensional) electron-hole pairs.