Abstract
The physico-chemical properties of plasma deposited silicon nitride films from Si-enriched ones to those containing excessive nitrogen (relative to stoichiometric Si3N4) are investigated. The film composition is calculated from the data of IR-spectroscopy. The rate of growth and etching, the density, and the index of refraction are measured. A model of the SiNxHy structure is proposed based on the assumption that groups of atoms are absent in the regulary lattice of silicon nitride. Some quantitative estimates are made at the basis of the percolation theory for the explanation of the exponential increase of the etching rate. Russian text ignored
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