Abstract
We report characterizations of two types of Si triple quantum dot (TQD) devices with charge sensors, with the aim of integrating spin qubits. The QDs of a single TQD device are connected in line to adjacent QD(s), while all QDs are tunnel-coupled to each other in the other device to form a triangle. Both TQD systems are physically defined on silicon-on-insulator substrates using electron beam lithography and dry etching. From electron transport measurements of each type of TQD system at 4.2 K, we demonstrate the formation of tunnel-coupled TQD systems and the tunability of their electric potentials.
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