Abstract
Copper oxide nanowires have been successfully prepared by vapor phase transport technique. The deposition conditions strongly influence the morphology of the nanostructures and in turn their electrical and functional properties. Micro-structural investigation and analysis of the electrical properties were performed together with electrical and functional characterization. Transmission electron microscopy confirmed the high crystalline properties and elemental composition of copper oxide nanostructure. P-type semiconductor and sensing behavior has been proved.
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