Abstract
A single-event-upset (SEU) model of a bipolar transistor based on device and ion-track physical parameters has been incorporated into standard SPICE. The model can predict the current/voltage waveforms of SEU in bipolar transistors and flip-flops. This model has been experimentally verified for bipolar transistors in several configurations under many bias conditions and subjected to more than five ion types (Kr, Br, Ar, N, He, etc.). The experimental SEU thresholds of six different flip-flops also agree within 50% of the simulations. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
