Abstract
A comparative analysis is given of the electrical and photoelectrical properties of thin film Cu 2S/Zn x Cd 1− x S heterojunctions prepared by chemical treatment of Zn x Cd 1− x S films with a hot aqueous CuCl solution and with CuCl in a solid state reaction. The characteristics of the physicochemical processes taking place in the formation of a Cu 2S barrier layer by these two methods are discussed. It is shown that in the solid state reaction the Cu 2S layer is formed mainly on the outer surface of the Zn x Cd 1− x S film, whereas in the aqueous method the barrier layer is formed both on the outer surface and along grain boundaries of the Zn x Cd 1− x S.
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