Abstract
The electrical properties of vanadium pentoxide have been used to formulate a picture of the defect structure of the solid. Oxygen vacancies in the crystal lattice form electron donor levels 0.42 e. v. below the conduction band and are in sufficient concentration to be a good source of electrons for the solid. The defects appear to be quite mobile in the surface region even below 180° but are mobile in the bulk only above 350°. The concentration of defects at the surface is greatly diminished by chemisorbed oxygen, which causes the formation of a surface barrier layer. The presence of an electron-donating agent such as ethylene or xylene prevents formation of the barrier layer. The exchange of oxygen at the surface during a catalytic reaction should be much faster than has been indicated by measurement of oxygen adsorption.
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