Abstract
In present study, Cu2SnS3 (CTS) thin films were prepared by sulfurization of co-sputtered Cu-Sn metallic precursors by varying the sulfurization temperature (Ts) in the range, 200-400°C and remaining deposition parameters were kept constant. The structural, microstructural, compositional and optical properties of the films were investigated. X-ray diffraction analysis indicated the (112) plane as preferred orientation with tetragonal crystal structure. Raman analysis showed the peaks allowed at 294 cm-1, 327 cm-1 and 348 cm-1 were characteristic modes of tetragonal CTS films. The AFM images revealed that the grains were uniformly distributed over the substrate surface and the average grain size, surface roughness, and skewness of the films were also estimated. EDS profiles confirm the presence of Cu, Sn and S elements in all the films and showed stoichiometric proportion of constituent elements present in the layer synthesized only at Ts=400°C. The optical band gap (Eg) of the as-grown films was estimated from the differential reflectance (dR/dE) versus photon energy spectra and decreased with increase of Ts from 1.66 eV to 1.45 eV. A detailed analysis of these results was presented and discussed.
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