Abstract
Thin films of CdS, CIGS and CdTe were prepared on the glass substrate by vacuum thermal evaporation technique in the thickness 200,500,500 respectively at room temperature. From the study Structural properties of the thin films by the X - ray diffraction, we found polycrystalline nature for all thin films with a preferred orientation along [111] cubic for CdS and [211], [112] hexagonal for CIGS and [111], [202], [311] cubic for CdTe. The Transmittance spectrum was recorded as a function of wavelength range (500-1100) nm. The energy gap measurements record 2.35,1.75.1.5eV respectively. we have found one activation energy for CIGS and two for both of CdS and CdTe that with explored from measure electrical conductivity with temperature. The Hall Effect measurements show that CIGS and CdTe were p-tyes carrier concentration and CdS thin films were n-type carrier. the current -voltage test in dark and light condition show all types of thin films have photoconductivity properties.
Published Version
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