Abstract
The influences of plastic deformation at low temperature (Tdef: 4.2 K; 77 K) on optical absorption, luminescence emission, and photoconductivity in the AIIBVI semiconductors CdS and CdSe are investigated. It is shown that even very small plastic deformation (e ≈ 10−4) leads to spatially inhomogeneously distributed remarkable changes of optical spectra in both the near band edge region and the range of deep centers. The main role of metastable point defect complexes introduced by the plastic flow is pointed out. Crystallographic nature and optical and electrical properties of the defect centers are discussed. The optical transitions in the defect centers are explained by a bound exciton mechanism. Furthermore, a variation of carrier lifetime due to dislocation glide destroying non-radiative centers is concluded. [Russian Text Ignored].
Published Version
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