Abstract
This work presents a model for the Schottky barrier (SB) carbon nanotube field effect transistor (CNTFET), where the source and the drain electrodes contacts are characterised following a model showing the formation of SBs at the metal electrode-nanotube interface and having a direct influence on the CNTFET transport properties. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity on the static electrical performances of the transistor, particularly to determine the intrinsic properties of the nanodevice. Moreover, a compact model-simulation results based on the (I–V) characteristics was given.
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