Physical methods used for the characterization of modes of epitaxial growth from the vapor phase

Abstract

The three modes of epitaxial growth from the vapor phase known from theory are experimentally illustrated with examples. Special emphasis is placed on the usefulness of the different techniques of characterization of the growth mechanisms: (a) Frank - van der Merwe layer-by-layer growth; (b) Volmer-Weber three-dimensional growth mode; (c) Stranski-Krastanov intermediate growth mode. In the study of epitaxy, RHEED, AES, and TEM are suitable tools in most of the cases, but other methods such as ellipsometry and desorption kinetics in various circumstances, appear very promising.