Abstract
We have investigated transient I d - V g and I d - V d characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics. We show transient negative capacitance (TNC) with polarization reversal and depolarization effect can result in sub-60mV/dec subthreshold swing (SS), reverse drain-induced barrier lowering (R-DIBL), and negative differential resistance (NDR) without traversing the quasi-static negative capacitance (QSNC) region of the S-shaped polarization-voltage (P - V) predicted by single-domain Landau theory. Moreover, the mechanisms of R-DIBL and NDR based on the TNC theory are discussed in detail. The results demonstrated in this work can be a possible explanation for the mechanism of previously reported negative capacitance field-effect transistor (NCFET) with sub-60mV/dec SS, R-DIBL, and NDR.
Highlights
Ferroelectric field-effect transistor (FeFET) with sub60mV/dec subthreshold swing (SS) has become one of the most promising transistor solutions for low-power computing [1]–[3]
It was pointed out that sub-60mV/dec SS observed in experiments can be explained by the transient negative capacitance (NC) (TNC) theory (Fig. 1 (b)) without traversing the quasistatic NC (QSNC) region of the S-curve [10]–[15]
We found that TNC and sub-60mV/dec SS are induced under the condition of |dP/dt| > |dQ/dt| in transient case
Summary
Ferroelectric field-effect transistor (FeFET) with sub60mV/dec subthreshold swing (SS) has become one of the most promising transistor solutions for low-power computing [1]–[3]. Both a ferroelectric-dielectric (FEDE) series capacitor and FeFET were simulated to investigate the physical mechanism of sub-60mV/dec SS based on the TNC theory [10]. FeFET with sub-60mV/dec SS exhibits unique device characteristics such as reverse drain-induced barrier lowering (R-DIBL) and negative differential resistance (NDR) [6], [19]–[21] These special behaviors were predicted by the QSNC theory and regarded as the indication of the stabilized NC in ferroelectric [22]–[24]. The only difference between them is the additional HfZrO2 (HZO) thin film in the gate stack of FeFET
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