Abstract
The structure of the ZnO-based p-ZnO:LiNO3/i-ZnO/n-ZnO:In nanorod ultraviolet (UV) photodetectors was grown on sapphire substrates using the vapor cooling condensation system. To study the internal gain mechanisms of the photodetectors, the ZnO-based nanorods were photochemically passivated for different time and operated under various environments to vary the defect density resided on the sidewall surface of the ZnO-based nanorods. The mechanisms of the internal gain, which was attributed to the surface band bending effect of the ZnO-based nanorods induced from the sidewall surface defects and the absorbed oxygen molecules, were thus derived. The specific detectivity of $3.25\times 10^{15}$ cmHz $^{\mathrm {1/2}}\text{W}^{-1}$ was obtained for the ZnO-based nanorod UV photodetectors treated with the photoelectrochemical passivation process for 2 min.
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