Abstract
We have fabricated a programmable ultraviolet (UV) detection integrated circuit unit consisting of a ZnO thin film transistor (TFT) and a ZnO thin film UV photodetector (PD). The prepared ZnO-TFT shows good switching characteristics with an ON/OFF ratio of more than $10^{4}$ . The ZnO UV PD has outstanding UV photocurrent characteristics, with a light-to-dark-current ratio more than $10^{4}$ under 365 nm UV light of 1.224 mW/cm2. It also shows a stable, reproducible, and rapid response with a rise time of 35.0 ms and a fall time of 43.9 ms when exposing to periodically switched UV light illumination. ZnO-TFT and ZnO thin film UV PD were integrated into a resistance load circuit unit. The results show that the output current in the circuit is only observed when the ZnO-TFT is turned ON. The current intensity is proportional to the UV intensity. The proposed ZnO-based UV detection integrated circuit unit is able to achieve programmable measurement of UV illumination and supply a new method to obtain all ZnO-based integrated circuit programmable UV detection system.
Published Version
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