Abstract
Progress toward obtaining an understanding of the physical processes that are active during ion beam assisted deposition (IBAD) is reviewed. A model is presented that includes the effects of sputtering, reflection of ions, multiple species beam. charge exchange neutralization, and incorporation of ambient gas atoms. Good agreement is found with data for the composition of silicon nitride. boron nitride and titanium nitride films as a function of the arrival ratio of nitrogen ions to evaporant atoms. Calculations based upon collision cascade simulation are reviewed which predict the energy dependence of the critical arrival ratio to achieve low intrinsic stress in deposited films. Factors which influence the choice of IBAD system geometry, the choice of ion beam energy, and applications of the films are also discussed.
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