Abstract
This paper reviews work at NRL to develop an improved understanding of the ion-beam-assisted deposition (IBAD) process and to develop a highly reproducible IBAD system for research and applications. A theoretical treatment of the IBAD process by collision cascade simulation is first reviewed. Fundamentals of the growth dynamics are treated, including the effects of sputtering, reflection, species distribution and charge exchange neutralization of the ions, and the ion-beam-enhanced desorption and reaction rates of gaseous impurities on the surface. Data are presented which demonstrate how changes in process parameters affect the film composition and film properties. These parameters are gas pressure, evaporation rate, ion current and ion energy. Most of the discussion centers on silicon nitride and titanium nitride films. Comparison of these two systems allows the separation of physical and chemical effects on film composition. Finally, unusual structural and mechanical properties of Si 1−xN x metastable films are described as well as applications of the films.
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