Abstract
The physical and technological characteristic features of the installation of dies onto a temporary foundation in the internal wiring technology are studied. The justified selection of the material for the fixation of silicon dies active side down onto a temporary foundation from various solutions of polyamic acids (PAAs) is performed. The experimental dependence of the adhesion strength of silicon dies on the lifetime of the solutions of PAAs is found. The possible defects formed upon the imidization of PAAs in the process of creation of highly integrated microassemblies, multidie modules, and electronic modules of the “system in package” level are shown.
Published Version
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