Abstract
Copper oxide (CuO4.8) is proposed as a hole-selective layer (HSL) for screen-printed mono-crystalline silicon solar cell (SMSC) applications. The bandgap, work function, and valance band offset (VBO) of the CuO4.8 HSL are presented. The energy band diagram of the P-Si(100)/SiOx/CuO4.8/Ag stacked film is shown. The results indicate an improvement of the conversion efficiency of more than 1.4% absolute from 17.2% to 18.6% for SMSCs with CuO4.8 as the HSL. The promotion mechanism is attributed to the low VBO of the CuO4.8 HSL. Moreover, the surface recombination is reduced by tunneling SiOx formed on the Si surface during CuO4.8 evaporation at a specific ambient oxygen level.
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