Abstract
Ruthenium silicide films were formed on silicon wafers by sputtering from either ruthenium or ruthenium silicide targets with subsequent annealing in the temperature range of 400–800 °C. The growth of Ru2Si3 was confirmed by x-ray diffraction, Raman spectroscopy and ellipsometric measurements. Ru/Si and Ru2Si3/Si vertical heterostructure diodes were fabricated and the barrier height was extracted through current–voltage measurements. Good rectifying properties of polycrystalline Ru2Si3/Si structures were observed.
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