Physical and electrical properties of promising chalcogenide glassy system doped with Ag2S

Abstract

In light of the DC conductivity model and the variable range hopping model, the creation of various chalcogenide glassy systems with Ag2S doping has been discussed. For exploration of microstructure of the system, X-ray diffraction (XRD) studies have been carried out and several nanophases for instance Ag2Se and GeSe2 have been found out. Dislocation defects have been detected and their involvement in electrical transport properties have been determined. Enhancement of the structural vibrations may be caused by optical phonon frequency which employs rise in DC electrical conductivity. At both low and high temperatures, the theory for the large development of density of states at Fermi level has been outlined. The existing system is intended to grow in order to reduce cross-section scattering and achieve higher densities of states N(EF) at higher temperatures.