Abstract
We have grown GaAsN and InAsN layers by liquid phase epitaxy technique and measured their physical and electrical properties. Hall electron mobility of GaAsN layers is found to decrease as the nitrogen concentration in the material is increased. This corresponds to a simultaneous increase in the concentration of a nitrogen related 0.7 eV electron trap, measured by low temperature photocapacitance technique. This result indicates that the (N-N)as defect, which is believed to be the origin of the electron trap, is partly responsible for the decrease in mobility. InAsN layers have been characterized by energy dispersive X-ray and high resolution X-ray diffraction measurements and the presence of nitrogen in the material has been confirmed.
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