Abstract
Inorganic ternary type materials are induced compound is worked as fundamental applications in transformation of the solar light energy into electrical energy. Copper zinc selenide thin films have been synthesized by chemical bath deposition method on to stainless steel plate. The configuration of fabricated cell is p-Cu0.5Zn0.5Se| NaOH(1M) + S(1M) + Na2S(1M) |C(graphite). The Photovoltaic cell characterization of the films is carried out by studying current–voltage characteristics in dark, capacitance–voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that Cu0.5Zn0.5Se thin films are p-type conductivity. The junction ideality factor was found to be 2.93. The flat band potential was found to be -0.708V. The barrier height value was found to be 0.186 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 21 μA, 42.13%, and 0.63%, respectively. Photoresponse shows lighted ideality factor is 2.89. Spectral response shows the maximum current observed at 580 nm.
Highlights
Due to the energy crises in the world and increasing demand of energy it is the need of our situation to develop new type of solar energy sources[1]
Solar cells or photovoltaic cells are made based on the principle of the photovoltaic effect
The type of conductivity exhibited by the film is determined by nothing the polarity of the emf developed in Photovoltaic cells (PVC) cell under illumination
Summary
Due to the energy crises in the world and increasing demand of energy it is the need of our situation to develop new type of solar energy sources[1]. Copper zinc selenide is a narrow band gap material at room temperature. It is efficiently used in black, and red-light emitting diodes, photovoltaics, laser screens, thin film transistor and Photovoltaic cells[4,5,6,7]. In Photovoltaic cells (PVC), the interface which forms on mere dipping the semiconductor into electrolyte solution and the liquid junction potential barrier can be established. Polycrystalline semiconductor films can be used without any drastic decrease in efficiency[8]. This is probably due to the intimate and perfect contact of liquid electrolyte with the crystalline grains. I–V, C–V characteristics, barrier height measurements, power out curves, photoresponse, and spectral response parameters are studied
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